It is anticipated that within just a few decades, the surging volume of digital data will constitute one of the world's largest energy consumers. Now, researchers at Chalmers University of Technology, ...

Japanese scientists have developed a spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) device with the world’s lowest write power in a significant step toward energy-efficient, ...

Magnetic memory techniques have emerged as a promising non‐destructive evaluation (NDE) approach to assess the stress state and detect early damage in ferromagnetic materials. By utilising the ...

A joint research team from NIMS, The University of Tokyo, Kyoto Institute of Technology and Tohoku University has demonstrated that thin films of ruthenium dioxide (RuO₂) exhibit altermagnetism—the ...