DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "Wolfspeed C3M900V SiC MOSFET: Structure and Cost Analysis" report to their offering. The SiC C3M Platform is the first ...

TOKYO--(BUSINESS WIRE)-- Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor ...

Irvine, Calif.—Using a superjunction structure to increase power efficiency in switched-mode power supplies, Toshiba's DTMOS II family of 600V power MOSFETs reduce on-state resistance and gate charge ...

DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "Rohm BSM180D12P3C007 Trench SiC MOSFET: Structure and Cost Analysis" report to their offering. The BSM180D12P3C007 is a ...

Although the development of power MOSFETs began with the V-MOS structure, the first commercially successful devices were based on the DMOS structure. In the DMOSFET structure, the MOS channel is ...

Twelve members of a family of 600-V superjunction MOSFETs feature high efficiency for switched-mode power supplies. Applications include ac adapters in notebook and desktop computers, servers, flat ...

Over the years, low losses possible by high breakdown field made silicon carbide (SiC) MOSFETs extremely popular amongst engineers. At present, they are mostly used in areas where IGBTs (Insulated ...

Each new generation of microprocessors has seen the integration of a larger number of transistors operating at higher clock frequencies with the goal of enabling higher performance in computing and ...

The new product is housed in a TOLL package that allows Kelvin connection of its signal source terminal for the gate drive. The influence of inductance in the source wire in the package can be reduced ...

Diamond is largely recognized as the ideal material in wide bandgap development, but realizing its full potential in field-effect transistors has been challenging. Researchers incorporate a new ...

Researchers at Mitsubishi have created custom mosfets for an all silicon carbide 3.3kV 1.5kA dc to three-phase traction inverter for railway trains, claiming the inverter to be a world first. The ...