ST has announced two new high-speed half-bridge gate drivers that bring GaN efficiency, thermal performance, and ...
GENEVA, SWITZERLAND, April 1, 2026 / EINPresswire.com / — STMicroelectronics has announced two new high-speed half-bridge ...
Check out the latest stories, videos, and podcasts from the week of Mar. 30, 2025.
Power device manufacturers exhibit their latest advances in topologies, packaging, and solutions at APEC 2026.
Summary onsemi announced a new design win with Sineng Electric, which will feature onsemi’s latest‑generation hybrid power integrated module ...
Renesas unveils what it claims is the industry’s first bidirectional switch based on depletion‑mode GaN technology.
Renesas Electronics has introduced what is claims is the industry’s first bidirectional switch using depletion-mode (d-mode) ...
Morning Overview on MSN
Tiny microwave-photon detector could boost quantum sensing and computing
A research team led by Pasquale Scarlino at EPFL has built a small, tunable detector capable of sensing individual microwave ...
First-of-its-kind bidirectional GaN technology with DC blocking dramatically reduces switch count needed for power conversion ...
Overcoming the constant challenge to maintain strict independence of functional safety while improving life cycle performance ...
QSiC Dual3 1200-V half-bridge MOSFET modules from SemiQ address the efficiency and thermal demands of liquid-cooled AI data centers.
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